Abstract
Introduction: Silver nanoparticle (AgNP)-based chemical etching is applied to produce silicon nanowires (SiNWs) on monocrystalline silicon.
Methods: The effect of etching time on the production of silicon nanowires and on optical and optoelectronic properties was studied.
Results: Using this approach, surface recombination velocity (Seff) and the effective lifetime (τeff) evolution of SiNWs after passivation were improved, and SiNWs obtained in the optimal time of 20 min, exhibited shallow reflection of 1% in the wavelength range of 300–1100 nm.
Conclusion: Thus, passivated solar cell-based SiNWs in an HF/HNO3/H2O solution were essential for increasing the efficiency of solar cell-based SiNWs from 9% to nearly 15%.
Keywords: Monocrystalline silicon, nanowires, etching, recombination velocity, silicon solar cell, nanoscale mask.
Graphical Abstract