Search Result "switched capacitance interface."


Capacitive Sensor Estimation Based on Self-Configurable Reference Capacitance

Journal: Recent Patents on Signal Processing (Discontinued)
Volume: 3 Issue: 1 Year: 2013 Page: 12-21
Author(s): N. Petrellis, C. Spathis, K. Georgakopoulou, A. Birbas

Research Article

Analysis and Effects of Voids in Cylindrical Surrounding Double- Gate MOSFET for the RF Switches

Journal: Nanoscience & Nanotechnology-Asia
Volume: 7 Issue: 2 Year: 2017 Page: 243-251
Author(s): Viranjay M. Srivastava

Effect of Dielectric Charging on Capacitance Change of an SOI Based CMUT

Journal: Micro and Nanosystems
Volume: 6 Issue: 1 Year: 2014 Page: 55-60
Author(s): Tugrul Zure,Sazzadur Chowdhury

Systematic Review Article

A Systematic Review of Reliability Issues in RF-MEMS Switches

Journal: Micro and Nanosystems
Volume: 11 Issue: 1 Year: 2019 Page: 11-33
Author(s): Muhammad Mubasher Saleem,Hamid Nawaz

Low Current Resistive Switching Behavior in Semiconductor/Ferroelectric Coupling

Journal: Current Nanoscience
Volume: 10 Issue: 1 Year: 2014 Page: 16-19
Author(s): Hongsu Park,YoungWoong Moon,DuckKyun Choi

A Review on Selected Patents about Trends Regarding Silicon Monolithic Power AC Switches

Journal: Recent Patents on Electrical & Electronic Engineering
Volume: 5 Issue: 3 Year: 2012 Page: 222-230
Author(s): Luong V. Phung,Nathalie Batut,Ambroise Schellmanns,Sebastien Jacques

Heatsink EMI Effects in Power Electronic Systems

Ebook: Electromagnetic Interference Issues in Power Electronics and Power Systems
Volume: 1 Year: 2011
Author(s): Gordana Klaric Felic
Doi: 10.2174/978160805240011101010057

Investigation of the Impact of Different Dielectrics on the Characteristics of AlN/β-Ga2O3 HEMT

Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Abdul Naim Khan
Doi: 10.2174/9789815238242124010011

Analysis of Negative to Positive Differential Conductance Transition in NCFET and Guidelines for Analog Circuit Designing

Ebook: Nanoscale Field Effect Transistors: Emerging Applications
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815165647123010009

New Narrow-gap Semiconductor ZnCdHgTe: Growth Technology and Principal Features of ZnCdHgTe-Based Structures

Ebook: Physics and Technology of Semiconductor Thin Film-Based Active Elements and Devices
Volume: 1 Year: 2009
Author(s): Halyna Khlyap
Doi: 10.2174/978160805021510901010063

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