Search Result "sub threshold slope"
Performance Analysis of SOI-Tunnel FET with AlxGa1-xAs ChannelMaterial
Journal: Micro and Nanosystems
Volume: 15 Issue: 3 Year: 2023 Page: 185-188
Author(s): Sanjeet Kumar Sinha
Investigation of the Impact of Different Dielectrics on the Characteristics of AlN/β-Ga2O3 HEMT
Ebook: Nanoelectronic Devices and Applications
Volume: 1 Year: 2024
Author(s): Abdul Naim Khan
Doi: 10.2174/9789815238242124010011
Electron Transport, Trapping and Recombination in Anodic TiO2 Nanotube Arrays
Journal: Current Nanoscience
Volume: 11 Issue: 5 Year: 2015 Page: 593-614
Author(s): Arash Mohammadpour,Piyush Kar,Benjamin D. Wiltshire,Abdelrahman M. Askar,Karthik Shankar
The R-Domain: Identification of an N-terminal Region of the α2δ-1 Subunit Which is Necessary and Sufficient for its Effects on Cav2.2 Calcium Currents
Journal: Current Molecular Pharmacology
Volume: 8 Issue: 2 Year: 2015 Page: 169-179
Author(s): Lele Song,Italo A. Espinoza-Fuenzalida,Sarah Etheridge,Owen T. Jones,Elizabeth M. Fitzgerald
An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET
Journal: Nanoscience & Nanotechnology-Asia
Volume: 9 Issue: 4 Year: 2019 Page: 504-511
Author(s): Sikha Mishra,Urmila Bhanja,Guru Prasad Mishra
Cardioprotective Effects of the If Current Inhibition by Ivabradine During Cardiac Dysfunction
Journal: Current Pharmaceutical Biotechnology
Volume: 14 Issue: 14 Year: 2013 Page: 1213-1219
Author(s): Jin B. Su
Reliability Analysis in Geotechnical Engineering
Ebook: Frontiers in Civil Engineering
Volume: 4 Year: 2020
Author(s): Y.M. Cheng,J. H. Wang,L. Liang,W. H. Fung Ivan
Doi: 10.2174/9789811437427120040004
An Extensive Simulation Study of Gate Underlap Influence on Device Performance of Surrounding Gate In0.53Ga0.47As/InP Hetero Field Effect Transistor
Journal: Nanoscience & Nanotechnology-Asia
Volume: 10 Issue: 2 Year: 2020 Page: 157-165
Author(s): Soumya S. Mohanty,Urmila Bhanja,Guru P. Mishra
Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body(5 nm) Double-gate MOSFETs for Hybrid RF Applications
Journal: Recent Patents on Nanotechnology
Volume: 18 Issue: 3 Year: 2024 Page: 335-349
Author(s): Viranjay. M. Srivastava
Supply Voltage Scaling for Energy Efficient FinFET Logic
Ebook: Nanoscale Field Effect Transistors: Emerging Applications
Volume: 1 Year: 2023
Author(s):
Doi: 10.2174/9789815165647123010007