Recent Trends of Patents on Front TCOs for Highly Efficient Thin-Film Si Photovoltaic Devices

Title:Recent Trends of Patents on Front TCOs for Highly Efficient Thin-Film Si Photovoltaic Devices

Volume: 8 Issue: 3

Author(s): Seung Y. Myong

Affiliation:

Keywords: Anti-reflection, light trapping, surface morphology, schottky barrier reduction, TCO, thin-film Si photovoltaic device.

Abstract: The recent trends of US patents on the front transparent electrode of thin-film silicon (Si) photovoltaic (PV) devices are reviewed. The various transparent conductive oxide (TCO) materials have been invented to satisfy a multifunctional prerequisite for the front electrode: high electrical conductivity, high optical transparency, effective light trapping, anti-reflection effect, and diffusion barrier. The recent surge of filed patents reflects the great importance of the front TCO technology for high efficiency thin-film Si PV devices. Among the TCO materials, properties of commercially available F-doped tin oxide (SnO₂:F)-coated glass substrates are compared. SnO₂:F-coated glass substrates share 20-30% of the cost for production of thin-film Si PV modules - evaluated values from mass production at KISCO. Therefore, the cost and technological innovation must be established for cost-effective mass production of large-area thin-film Si multijunction PV modules.

Cite this article as:

Myong Y. Seung, Recent Trends of Patents on Front TCOs for Highly Efficient Thin-Film Si Photovoltaic Devices, Recent Patents on Nanotechnology 2014; 8 (3) . https://dx.doi.org/10.2174/1872210508666141022113459