Temperature Dependence of Barrier Height and Performance Enhancement of Pentacene Based Organic Thin Film Transistor with Bi-Layer MoO3/Au Electrodes

Title:Temperature Dependence of Barrier Height and Performance Enhancement of Pentacene Based Organic Thin Film Transistor with Bi-Layer MoO3/Au Electrodes

Volume: 9 Issue: 3

Author(s): Mir Waqas Alam, Zhaokui Wang, Shigeki Naka and Hiroyuki Okada

Affiliation:

Keywords: Pentacene, Organic Thin film transistors, Semiconductors.

Abstract: We investigated top-contact pentacene-based organic thin-film transistor (OTFTs) with bi-layer MoO3/Au electrodes. The device performance including field effect mobility, threshold voltage, and On/Off ratio was highly improved in a device with 5 nm MoO3 layer which showed the highest field-effect mobility of 0.72 cm2 V-1s-1. In addition, from temperature dependence characteristics, we observed that the barrier height was dramatically decreased from 0.12 eV (without MoO3) to 0.03 eV in device with 5 nm MoO3 layer. This improved device performance was attributed to significant reduction in barrier height at Au/pentacene interfaces and surface roughness of pentacene layer after inserting a suitable MoO3 layer between pentacene and gold electrodes.

Cite this article as:

Alam Mir Waqas, Wang Zhaokui, Naka Shigeki and Okada Hiroyuki, Temperature Dependence of Barrier Height and Performance Enhancement of Pentacene Based Organic Thin Film Transistor with Bi-Layer MoO3/Au Electrodes, Current Nanoscience 2013; 9 (3) . https://dx.doi.org/10.2174/1573413711309030019