Abstract
We investigate the excitation behavior of a repulsive impurity doped quantum dot induced by a rectified sinusoidal field. We have considered repulsive Gaussian impurity centers. The investigation reveals the sensitivity of the coupled influences of dopant potential and dopant location towards modulating the excitation rate. The present study also indicates a minimization in the excitation rate at far off-center dopant locations when the strength of the impurity potential is moderate. The critical dissection of the characteristics of various impurity parameters provides important insight into the physics underlying the excitation process.
Keywords: Quantum dot, impurity doping, impurity location, impurity strength, excitation rate, rectified field, dopant location, perturbations, formalism, Hamiltonian, excitation rate, continual drop, sinusoidal field, nanomaterials, preponderance
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