Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

Title: Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching

Volume: 7 Issue: 4

Author(s): Zhan-Shuo Hu, Fei-Yi Hung, Shoou-Jinn Chang, Bohr-Ran Huang, Bo-Cheng Lin, Kuan-Jen Chen, Tse-Pu Chen and Wen-I Hsu

Affiliation:

Keywords: Ag, double masks, field emission, FIB, GaN, iodine, iodine GaN nanotip, GaO, AgO, Etching Mechanism, Ag cluster

Abstract: GaN nanorods are fabricated with an AgO mask by a process of iodine-assisted focused ion beam etching (IFIBE). The transformation from GaN nanorod to GaN nanotip structure, the thermal treatment uses a high temperature of 800° C in air to increase the partial oxygen pressure resulting in the formation of a double mask, GaO and AgO. In addition, the Ag clusters react with the iodine gas to affect the etching rate and retain a GaO zone on the GaN nanotip arrays. Oxide-capped GaN nanotips can be applied as field emitter. The turn-on electric field was 2.2V/um when the current density was 0.1mA/cm2.

Cite this article as:

Hu Zhan-Shuo, Hung Fei-Yi, Chang Shoou-Jinn, Huang Bohr-Ran, Lin Bo-Cheng, Chen Kuan-Jen, Chen Tse-Pu and Hsu Wen-I, Growth Mechanism and Field Emission Characteristics of GaO/GaN Nanotips Using Iodine-assisted Enhanced Focused Ion Beam Etching, Current Nanoscience 2011; 7 (4) . https://dx.doi.org/10.2174/157341311796196718