Er-Doped ZnO Nanorod Arrays with Enhanced IR Emission by Using Au Island Films

Title: Er-Doped ZnO Nanorod Arrays with Enhanced IR Emission by Using Au Island Films

Volume: 7 Issue: 2

Author(s): Jian-Wei Lo, Chin-An Lin and Jr-Hau He

Affiliation:

Keywords: ZnO, IR emission, nanowire, nanorod, Er, surface Plasmon, Er-doped semiconductors, photoluminescence, Au Island Films

Abstract: Self-assembled nanorod array (NRA) heterostructures consisting of single-crystalline Er-doped ZnO NRAs on Au island films have been synthesized by a chemical method and proposed as one of the promising optoelectronic materials since the Er intra-4f shell transition leads to 1540 nm emission for optical communication. The microstructural analysis, electronic structure analysis, and photoluminescence characterizations have been performed. The enhanced 1540 nm emission of Er-doped ZnO NRAs is due to the enhancement of deep level emission of ZnO host, which results from local field enhancement effects of Au island films, and subsequent energy transfer to Er3+.

Cite this article as:

Lo Jian-Wei, Lin Chin-An and He Jr-Hau, Er-Doped ZnO Nanorod Arrays with Enhanced IR Emission by Using Au Island Films, Current Nanoscience 2011; 7 (2) . https://dx.doi.org/10.2174/157341311794653659