A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software

Title: A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software

Volume: 7 Issue: 2

Author(s): Roberto Marani and Anna Gina Perri

Affiliation:

Keywords: Nanoelectronic devices, nanotechnology, carbon nanotube field effect transistors (CNTFETs), modelling, analog and digital circuit design, silicon-based transistors, Semi-empirical Model, Simulation Software

Abstract: We present a compact, semi-empirical model of Carbon Nanotube Field Effect Transistors (CNTFETs) directly and easily implementable in simulation software.

A new procedure, based on a best-fitting between the measured and simulated values of output device characteristics, is proposed in order to extract the optimal values of the CNTFET equivalent circuit elements.

To verify the versatility of the proposed model, we use it in circuit simulators to design some electronic circuits. In particular we investigate about the effects of the CNT quantum resistances and inductances, then demonstrating their role for both analog and digital applications at frequencies over about ten THz.

Cite this article as:

Marani Roberto and Gina Perri Anna, A Compact, Semi-empirical Model of Carbon Nanotube Field Effect Transistors Oriented to Simulation Software, Current Nanoscience 2011; 7 (2) . https://dx.doi.org/10.2174/157341311794653613