Abstract
Physical vapor deposition (PVD) is a thin film fabrication process in the semiconductor industry. This review paper discusses the different types of PVD methods such as sputtering, cathodic arc deposition, pulsed laser deposition, and ion plating that could be employed in order to fabricate nanoscale thin films. This paper focuses on reviewing Zr-based nanoscale thin film properties, including the transformation of Zr to ZrO2 based nanofilms as high-k gate dielectrics. Additionally, its corrosion, mechanical and degradation resistance were thoroughly analysed. These properties are affected by gas flow rate changes, temperature, and crystallinity and are further discussed in each section. Thus, this review paper informs researchers of the thin films progress to date. Understanding the influence of PVD process parameters in fabricating Zr-based nanoscale thin film is vital for its long-term continuous improvement.
Keywords: PVD, sputtering, corrosion, zirconium oxynitride, dielectric, nanofilms.
Graphical Abstract
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