Design, Simulation and Analysis of Perforated RF MEMS Capacitive Shunt Switch

Title:Design, Simulation and Analysis of Perforated RF MEMS Capacitive Shunt Switch

Volume: 13 Issue: 4

Author(s): Srinivasa Rao Karumuri*, Ch. Gopi Chand, Koushik Guha, Niladri P. Maity, Reshmi Maity, Santanu Maity, Dinnipati Prathyusha and Girija S. Kondavitee

Affiliation:

• MEMS Research Center, Department of ECE, Koneru Lakshmaiah Education Foundation (Deemed to be University), Green Fields, Vaddeswaram, Guntur 522502, Andhra Pradesh,India

Keywords: Spring constant, pull-in voltage, switching time, COMSOL, FEM tool, Ashby's method.

Abstract:

Objective: This paper presents the design and simulation of double bridge-type capacitive RF MEMS switch by using FEM Tool.

Methods: It is mainly concentrated on a low pull-in voltage, capacitance, and RF analysis. The beam is considered as a gold metal having the length of 595 μm along with the 1μm thickness and the dielectric is taken as Silicon nitride (Si₃N₄) by using Ashby’s method. The non-uniform meandering technique and perforations are used to reduce the pull-in voltage, by changing different beam thickness, air gap and materials.

Results: The pull-in voltage of the proposed RF MEMS switch is 1.2 V. The scattering parameters are simulated by using Ansoft HFSS software. The simulation results of S-parameters such as return loss, insertion losses are, -19.27 dB and -0.20dB. The switch having good isolation is -63.94 dB at 8 GHz.

Conclusion: The overall switch is designed with different beam thickness, various gap, and different materials to identify the best performance of the switch for low-frequency applications i.e X-bands.

Cite this article as:

Karumuri Rao Srinivasa*, Chand Gopi Ch. , Guha Koushik, Maity P. Niladri, Maity Reshmi , Maity Santanu , Prathyusha Dinnipati and Kondavitee S. Girija, Design, Simulation and Analysis of Perforated RF MEMS Capacitive Shunt Switch, Micro and Nanosystems 2021; 13 (4) . https://dx.doi.org/10.2174/1876402911666190820094947