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Nanoscience & Nanotechnology-Asia

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ISSN (Print): 2210-6812
ISSN (Online): 2210-6820

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Research Article

Terahertz Radiators Based on Si~3C-SiC MQW IMPATT Diodes

Author(s): Monisha Ghosh, Arindam Biswas and Aritra Acharyya*

Volume 10, Issue 4, 2020

Page: [501 - 506] Pages: 6

DOI: 10.2174/2210681209666190807154014

Price: $65

Abstract

Aims: The potentiality of Multiple Quantum Well (MQW) Impacts Avalanche Transit Time (IMPATT) diodes based on Si~3C-SiC heterostructures as possible terahertz radiators have been explored in this paper.

Objective: The static, high frequency and noise performance of MQW devices operating at 94, 140, and 220 GHz atmospheric window frequencies, as well as 0.30 and 0.50 THz frequency bands, have been studied in this paper.

Methods: The simulation methods based on a Self-Consistent Quantum Drift-Diffusion (SCQDD) model developed by the authors have been used for the above-mentioned studies.

Results: Thus the noise performance of MQW DDRs will be obviously better as compared to the flat Si DDRs operating at different mm-wave and THz frequencies.

Conclusion: Simulation results show that Si~3C-SiC MQW IMPATT sources are capable of providing considerably higher RF power output with the significantly lower noise level at both millimeter-wave (mm-wave) and terahertz (THz) frequency bands as compared to conventional flat Si IMPATT sources.

Keywords: Avalanche noise, high frequency, multiple quantum well, self-consistent quantum drift-diffusion model, terahertz.

Graphical Abstract

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